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Features of Semiconductors during Nanoindentation

Published online by Cambridge University Press:  15 February 2011

Asta Richter ,
Bodo Wolf ,
Roger Smith  and
Margita Günther
Asta Richter
Affiliation:
University of Applied Sciences Wildau, Bahnhofstrasse 1, D-15745 Wildau, GERMANY
Bodo Wolf
Affiliation:
University of Applied Sciences Wildau, Bahnhofstrasse 1, D-15745 Wildau, GERMANY
Roger Smith
Affiliation:
Loughborough University, Loughborough, Leicestershire LE11 3TU, U. K.
Margita Günther
Affiliation:
Technical University Dresden, Department of Solid State Electronics, D-01062 Dresden, GERMANY
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Abstract

Si and InSb were subject to depth sensing multi-cycling nanoindentation. The load-depthcurves exhibited hysteresis loops which are explained in terms of pressure induced phase transformations. In order to study the impact of crystal distortions on phase transformation, the specimens were subject to boron implantation (ion energy 180 keV) of different implantation doses (1014 to 1017 ions/cm2) and indented without annealing. In InSb, the hysteresis loops disappeared after implantation of 1016 ions/cm2, and for Si with its stronger bonds, a dose of 3*1016/cm2 is required for the same effect. Indentation cycling with constant maximum load results in a sudden disappearance of the hysteresis loop after a small gradual loop area reduction during the first initial cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 779: Symposium W – Multiscale Phenomena in Materials - Experiments and Modeling Related to Mechanical Behavior , 2003 , W5.18
Copyright
Copyright © Materials Research Society 2003

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