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Feasibility Of Novel Si-Based Interminiband Lasers

Published online by Cambridge University Press:  10 February 2011

Gregory Sun
Affiliation:
Physics Department, University of Massachusetts at Boston, Massachusetts, 02125, gsun@cruiser.engin.umb.edu
Lionel Friedman
Affiliation:
Soref Sensors Directorate, Air Force Research Laboratory Hanscom AFB, Massachusetts, 01731–2909
Richard A. Soref
Affiliation:
Soref Sensors Directorate, Air Force Research Laboratory Hanscom AFB, Massachusetts, 01731–2909
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Abstract

We have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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