Hostname: page-component-5c6d5d7d68-wp2c8 Total loading time: 0 Render date: 2024-08-14T22:09:10.903Z Has data issue: false hasContentIssue false
  • English
  • Français

Fast Thermal Cycling - Enhanced Electromigratton Failures in Si/TiSi2W-Ti/Al-Si-Cu Multilayer Contacts

Published online by Cambridge University Press:  15 February 2011

Victor V. Ivkin  and
Valentin V. Baranov
Victor V. Ivkin
Affiliation:
Belarus State University of Informatics and Radioelectronics, 6 P.Brovka Str., Minsk, 220027, Republic of Belarus
Valentin V. Baranov
Affiliation:
Belarus State University of Informatics and Radioelectronics, 6 P.Brovka Str., Minsk, 220027, Republic of Belarus
Get access

Abstract

Failure mechanisms of TiSi2/W-Ti(15%)/Al-Si(l%)-Cu(2%) multilayer thin film contact to silicon shallow junction (0,25 μm) have been investigated. Both a fast temperature cycling (with 300 ms thermal cycle period) and a high constant temperature were used as means for the degradation processes acceleration. We have shown that stress time could be reduced by the factor of 10 or more if the temperature of adjacent contact region was cycled by a pulsed electrical current passed through the semiconductor region lying under the investigated contacts. Our data have also indicated that W-Ti barrier layer serves to reduce drastically the electromigration degradation of thin film contacts for failures caused by an increase in junction leakage on the one hand and on the other hand it serves to intensify the electromigration degradation caused by an increase in contact resistance. These distinctions have been explained through structural-morphological investigations of the contact layers surface morphology. They showed a reduction in size of crystallines of the sputter deposited Al-Si-Cu top layer with W-Ti barrier layer present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 441
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 J.R.Black, , Proc. IEEE. 57, 1587 (1969).Google Scholar
2 Kwok, T., Chan, K.K., Chan, H., and Simko, I., J. Vac. Sci. Technol, A9, 2523(1991).Google Scholar
3 Dostanko, A., Ivkin, V. and Salnikova, I., Proceedings of International Conferens of Microelec tronics: Microelectronics - 92, Warsaw, Poland, September 21-23, 1992, SPIE Proc., 1783, 128(1992).Google Scholar
4 Vollkommer, F., Bohn, H.G., Robrock, K-H. and Schilling, W., Proceedings of the 28th An nual IEEE International Reliability Phisics Symposium, 51, (1990).Google Scholar
5 Baranov, V.V., Ivkin, V.M. and Sakovitch, E.L., in Advanced Metallization for Devices and Circuits - Science, Technology and Manufacturability III, edited by S.P.Murarka, , K.N.Tu, , A.Katz, , K.Maex., (Mater. Res. Soc. Proc. 337, Pittsburg, PA, 1994) pp 255–260.Google Scholar
6 Abramov, I., Ivkin, V., and Gorbatch, V., Electronnaya Technika. Ser.3, 149, 28 (1992) (in russian).Google Scholar
7 Eshraghi, S.A., Georgion, G.E., Liu, R., Beairsto, R.C. and Cheung, K.P., J. Vac. Sci. Technol. B9, 69 (1991).Google Scholar
8 Lange, H., Mohling, W. and Marxsen, G., Thin Solid Films. 205, 47 (1991).Google Scholar