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Fast Thermal Cycling and Electro-Migration Properties of Si/TaSi2/TiN/Al-Si Multilayer Thin Film Contacts

Published online by Cambridge University Press:  25 February 2011

Valentin V.Baranov
Affiliation:
Belarusian State University of Informatics and Radioelectronics 6 P Brovka str., Minsk, 220027, Belarus
Victor M.Ivkin
Affiliation:
Belarusian State University of Informatics and Radioelectronics 6 P Brovka str., Minsk, 220027, Belarus
Elena L.Sakovitch
Affiliation:
Belarusian State University of Informatics and Radioelectronics 6 P Brovka str., Minsk, 220027, Belarus
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Abstract

For the electromigration test of Si/TaSi2/(Al-1wt%Si) and Si/TaSi2/TiN/(Al-1wt%Si) multilayer contacts we employed the special test structures which allow to passage a pulsed electrical current through the semiconductor region lying under investigated contacts and insulated from them by n+/p-junction. The contacts were tested in the optimal conditions (temperature was cycled in the ranges from 50°C to 175°C with 300ms thermal cycle period at 25 mA constant electrical current passaged through the investigated contacts). It has been shown that the electromigration life time has been shortened by more than an order of the magnitude compared to 200°C constant temperature test. SEM investigations of the sputter deposited thin film of multilayer contact have also shown that the Al-Si thin film on the TaSi2 layer had a fine structure with the average grain size about 0,3 μm. However a presense of the TiN interlayer with the thickness of 0.05 - 0.1 pm results in an increase of the average grain size of the upper Al-Si film up to 0,8μm. The result is the increase in the electromigration process activation energy that improves the electromigration life time contacts containing the TiN interlayer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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