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Fast Deposition of Microcrystalline Silicon Films Using The High-Density Microwave Plasma Utilizing a Spokewise Antenna

Published online by Cambridge University Press:  17 March 2011

H. Shirai ,
Y. Sakuma ,
K. Yoshino  and
H. Ueyama
H. Shirai
Affiliation:
Department of Functional Materials Science, Faculty of Engineering, Saitama University, 255 Shimo-Okubo, Urawa, Saitama 338-8570, Japan
Y. Sakuma
Affiliation:
Department of Functional Materials Science, Faculty of Engineering, Saitama University, 255 Shimo-Okubo, Urawa, Saitama 338-8570, Japan
K. Yoshino
Affiliation:
Department of Functional Materials Science, Faculty of Engineering, Saitama University, 255 Shimo-Okubo, Urawa, Saitama 338-8570, Japan
H. Ueyama
Affiliation:
Nihon Koshuha Co., Ltd. 1119 Nakayama, Midori-ku, Yokohama, 226-0011, Japan
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Abstract

The high-density and low temperature microwave plasma utilizing a spokewise antenna was successfully applied to fast deposition of highly crystallized and photconductive microcrystalline silicon (μ-Si:H) films at low temperatures. The deposition rate and film crytstallinity significantly depend on the axial distribution of the plasma parameters. Best crystallinity was obtained at the axial distance Z from the quartz glass plate, where the spread of the ion beam energy impinging to the growing surface was minimum. By optimizing the axial distance Z and total pressure, highly crystallized μ-Si:H films could be fabricated with a high deposition rate of ∼47Å/s in the SiH4 and Ar mixture plasma with no use of the H2 dilution. An intentional control of the ion beam energy is also attempted using a mesh grid electrode to suppress the ion bombardment to the growing surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A4.4
Copyright
Copyright © Materials Research Society 2000

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References

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