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Failure Analysis of Aluminum Wire Bonds in High Power Igbt Modules

Published online by Cambridge University Press:  21 February 2011

Klaus J. Dittmer ,
Max H. Poech ,
Frank W. Wulff  and
Martin Krumm
Klaus J. Dittmer
Affiliation:
CEM GmbH, Ilsahl 5, D-24536 Neum¨nster, Germany
Max H. Poech
Affiliation:
CEM GmbH, Ilsahl 5, D-24536 Neum¨nster, Germany
Frank W. Wulff
Affiliation:
CEM GmbH, Ilsahl 5, D-24536 Neum¨nster, Germany
Martin Krumm
Affiliation:
CEM GmbH, Ilsahl 5, D-24536 Neum¨nster, Germany
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Abstract

The reliability of high power Insulated Gate Bipolar Transistor (IGBT) modules is mainly limited by the aluminum wire bonds. Bond failure occurs due to fatigue fracture close to the welded interface inside the large bonding wire caused by thermal cycling at extreme operating conditions. This paper presents the results of the metallographic and electron microscopic examinations of the welded interface as well as fracture morphology investigations of failed parts after power cycling. Infrared thermal imaging and investigations of the stress/strain relationship analyze the differential expansion caused by temperature distribution and thermal expansion mismatch between large bonding wire and semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 390: Symposium S – Electronic Packaging Materials Science VIII , 1995 , 251
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Coquery, G., (Proc. ESREF 93, Bordeaux, 1993) pp. 259–264 Google Scholar
[2] de Lambilly, H. and Keser, H. E., IEEE Trans. on CHMT, 16 (4), 412–417 (1993)Google Scholar
[3] Dittmer, K., Krumm, M., Wu, W., Held, M., Jacob, P., (Proc. ISHM Italy, Milan 1994) pp. 217–225 Google Scholar
[4] Krzanowski, J.E. and Murdeshwar, N., J. Electr. Mater., 19 (9), 919–928 (1990)Google Scholar
[5] Hu, J.M., Pecht, M., A. Dasguta. J. of Electr. Pack., 113, 275–285 (1991)Google Scholar
[6] Neumann, P., in Physical Metallurgy, edited by Cahn, R.W., Haasen, P. (North-Holland Physics Publishing, Amsterdam, 1983), pp. 1554–1594 Google Scholar