Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-24T12:25:28.638Z Has data issue: false hasContentIssue false
  • English
  • Français

Factors Influencing the Quality of a-Si:H Films Deposited by the “HOT WIRE” Technique

Published online by Cambridge University Press:  16 February 2011

Edith C. Molenbroek ,
A. H. Mahan ,
E. J. Johnson  and
A. C. Gallagher
Edith C. Molenbroek
Affiliation:
National Renewable Energy Laboratory, Golden, Co 80401
A. H. Mahan
Affiliation:
National Renewable Energy Laboratory, Golden, Co 80401
E. J. Johnson
Affiliation:
National Renewable Energy Laboratory, Golden, Co 80401
A. C. Gallagher
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology, Boulder, CO 80309–0440
Get access

Abstract

Device quality a-Si:H has been deposited at 3 Å/s using the “hot wire” technique with 1% SiH4 in He as a source gas. To achieve this deposition rate despite the high dilution, the filament was positioned at 1–2 cm from the substrate. This short distance introduces a large non-uniformity across the substrate in the deposition rate as well as in the film properties. This experimental fact was used to analyze which factors in the deposition determine film quality. We find that radiation from the filament is not an important factor. Data taken from samples deposited at various distances, pressures and flows suggest that the film quality is influenced by radical reactions with SiH4. However, this assumption alone predicts too strong a pressure dependence. The influence of deposition rate as an additional factor can explain the results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 43
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mahan, A. H., Vanecek, M., SERI Stability Conference, Denver (1991)Google Scholar
2. Papadopulos, P., Scholz, A., Bauer, S., Schröder, B., Oechsner, H., ICAS, Cambridge, UK (1993)Google Scholar
3. Mahan, A. H., Nelson, B. P., Salamon, S., Crandall, R. S., J. Non Cryst. Solids 137&138, 657–660 (1991)CrossRefGoogle Scholar
4. Horbach, C., Beyer, W., Wagner, H., J. Non Cryst. Solids 137&138, 661–664 (1991)CrossRefGoogle Scholar
5. The absorption region around 2000–2100 cm−1 is caused by the stretch mode of Si-H bonds. The absorption peak around 2090 cm−1 is due to Si-H stretch modes from SiH2 groups and/or from SiH groups located on internal surfaces (void surfaces). The increased presence of this peak compared to the peak at 2000 cm−1 has been found to deteriorate electronic properties in a-Si:H and its alloys. See for exampleGoogle Scholar
Mahan, A. H., Raboisson, P., Williamson, D. L., Tsu, R., Solar Cells 21, 117–126 (1987).CrossRefGoogle Scholar
6. Jasinski, J. M., Chu, J. O., J. Chem. Phys. 88, 1678–1687 (1987)CrossRefGoogle Scholar
7. Doyle, J., Robertson, R., Lin, G. H., He, M. Z., Gallagher, A., J. Appl. Phys. 64, 3215–3223 (1988)CrossRefGoogle Scholar
8. Doughty, D. A., Doyle, J. R., Lin, G. H., Gallagher, A., J. Appl. Phys. 67, 6220–6228 (1990)CrossRefGoogle Scholar
9. Tang, Y.-N., Reactions of silicon atoms and silylenes, Abramovitch, R. A., Eds., Reactive Intermediates (1982), vol. 2 Google Scholar