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Facets Formation Mechanism of GaN Hexagonal Pyramids on Dot-Patterns via Selective MOVPE

Published online by Cambridge University Press:  21 February 2011

Kazumasa Hiramatsu ,
Shota Kitamura  and
Nobuhiko Sawaki
Kazumasa Hiramatsu
Affiliation:
Department of Electronics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japanhiramatu@nuee.nagoya-u.ac.jp
Shota Kitamura
Affiliation:
Department of Electronics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japanhiramatu@nuee.nagoya-u.ac.jp
Nobuhiko Sawaki
Affiliation:
Department of Electronics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japanhiramatu@nuee.nagoya-u.ac.jp
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Abstract

Three-dimensional GaN pyramids have been successfully obtained on dot-patterned GaN(0001)/sapphire substrates by using the selective MOVPE technique. The dot-pattern is a hexagon arranged with a 5μm width and a 10μm spacing. The GaN structure comprises a hexagonal pyramid covered with six {11ȃ01} pyramidal facets on the side or a frustum of a hexagonal pyramid having a (0001) facet on the top. The facet formation mechanism has been investigated by observing the facet structure with the growth time. The {11ȃ01} facets are very stable during the growth. The (0001) facet growth is dominant at the initial growth but almost stops at a certain growth time and then the facet structure is maintained. The appearance of the self-limited (0001) facet is attributed to the balance of flux between incoming Ga atoms from the vapor phase to the (0001) surface and outgoing Ga atoms from the (0001) surface to the {11ȃ01} surface via migration. The longer the diffusion length of the Ga atoms on the (0001) surface is, the more the surface migration is enhanced, resulting in the appearance of the wider (0001) facet on the top.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 267
Copyright
Copyright © Materials Research Society 1996

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References

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