Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-28T19:04:11.170Z Has data issue: false hasContentIssue false
  • English
  • Français

Faceted Melting and Superheating of Crystalline Si Irradiated with Incoherent Light

Published online by Cambridge University Press:  22 February 2011

G. K. Celler ,
K. A. Jackson ,
L. E. Trimble ,
McD. Robinson  and
D. J. Lischner
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. A. Jackson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. E. Trimble
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
McD. Robinson*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. J. Lischner
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 ATT Bell Laboratories, Allentown, PA 18103
*
1 Present address: Epsilon Technology, Inc., 2308 W. Huntington Rd. Tempe, AZ 85282
Get access

Abstract

We report and analyze the breakup of a crystalline silicon surface into solid and molten faceted segments by radiative heating. Melting starts at discrete sites since there is a nucleation barrier requiring superheating of the surface. Once started, the melt remains localized and does not encompass the entire surface because of the changes in optical properties of Si upon melting. It is estimated that superheating by <0.5 K should be sufficient to stabilize faceted melt regions spaced 200 μm apart. The preliminary measurements, however, indicate superheating by several degrees.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 409
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Celler, G. K., Robinson, McD., Trimble, L. E., and Lischner, D. J., Appl. Phys. Lett. 43, 868 (1983).Google Scholar
[2]Lischner, D. J. and Celler, G. K., Mat. Res. Soc. Symp. Proc. 4, 759 (1982).Google Scholar
[3]Robinson, McD., Lischner, D. J., and Celler, G. K., J. Cryst. Growth, 63, 484 (1983).Google Scholar
[4]Schimmel, D. G., J. Electrochem. Soc., 126, 479 (1979).Google Scholar
[5]Hawkins, W. G. and Biegelsen, D. K., Appl. Phys. Lett. 42, 358 (1983).Google Scholar
[6]Bosch, M. A. and Lemons, R. A., Phys. Rev. Lett. 47, 1151 (1981).Google Scholar
[7]Jackson, K. A. and Kurtze, D. A., J. Cryst. Growth, to be published.Google Scholar