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Facet Formation in Submicron Selective Growth of Si/SiGe

Published online by Cambridge University Press:  03 September 2012

K. L. Wang  and
Dawen Wang
K. L. Wang
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095.
Dawen Wang
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095.
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Abstract

The paper reviews the work in mostly Si and SiGe epitaxy and some III-V work on patterned substrates. Results of metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), gas source molecular beam epitaxy (GSMBE), and solid source molecular beam epitaxy (MBE) were discussed in the context of facet formation and mass accumulation. A model was shown to explain the facet formation and its evolution in the process of growth. Further work on surface diffusion and nucleation processes as functions of temperature and other growth parameters will provide needed information for accurate modeling of the facet growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 241
Copyright
Copyright © Materials Research Society 1997

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