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Fabrication of Undoped and N+ Microcrystalline si Films Using SiH2Ci2

  • Jae Seong Byun (a1), Hong Bin Jeon (a1), Jung Mok Jun (a1), Jae Ho Yoo (a1), Kyung Ha Lee (a1), Min Park (a1) and Jin Jang (a1)...

Abstract

We have studied the growth of undoped and n+ μc-Si:H (:CI) films by Remote Plasma CVD using SiH4/SiH2Cl2/H2/He mixtures. It was found that the μc-Si film can be fabricated by increasing flow rate of SiH2Cl2 and/or H2. The deposited undoped μc-Si film exhibited a maximum crystalline volume fraction of 85 %, obtained from Raman spectroscopy. The n-type μc-Si film, deposited with SiH4/SiH2Cl2/H2/PH3/He mixtures, shows a room temperature conductivity of 2 S/cm, conductivity activation energy of 29.8 meV and optical band gap of-2.0 eV. The optical band gap of n-type μc-S1 deposited using SiH2Cl2 is much higher compared to conventional μc-Si film.

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Fabrication of Undoped and N+ Microcrystalline si Films Using SiH2Ci2

  • Jae Seong Byun (a1), Hong Bin Jeon (a1), Jung Mok Jun (a1), Jae Ho Yoo (a1), Kyung Ha Lee (a1), Min Park (a1) and Jin Jang (a1)...

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