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Fabrication of Smooth GaN-Based Laser Facets

Published online by Cambridge University Press:  15 February 2011

D. A. Stocker ,
E. F. Schubert ,
K. S. Boutros  and
J. M. Redwing
D. A. Stocker
Affiliation:
Center for Photonics Research, Boston University, Boston, MA 02215
E. F. Schubert
Affiliation:
Center for Photonics Research, Boston University, Boston, MA 02215
K. S. Boutros
Affiliation:
Epitronics, Phoenix, AZ 85027
J. M. Redwing
Affiliation:
Epitronics, Phoenix, AZ 85027
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Abstract

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {1010}, {1011}, {1012}, and {1013}. The vertical {1010} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G7.5
Copyright
Copyright © Materials Research Society 1999

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