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Fabrication of planar SiON optical waveguide and its characterization

Published online by Cambridge University Press:  01 February 2011

Yu-Jeong Cho
Affiliation:
gktqk@kut.ac.kr, Korea university of technology and education, materials engineering, 330-708, Choan, N/A, N/A, Korea, Republic of
Yeong-Cheol Kim
Affiliation:
yckim@kut.ac.kr, Korea, Republic of
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Abstract

Silicon oxynitride (SiON) was deposited as a core layer on a silica (SiO2) under-cladding layer by using plasma enhanced chemical vapor deposition (PECVD). The refractive index of the SiON core layer was varied between 1.45 and 1.78 by changing the gas flow ratio of SiH4, N2O and NH3. Etching experiments were performed using a dry etching equipment to fabricate the SiON core. An optical planar waveguide with a core and under-cladding thicknesses of 6 μm and 8 μm, respectively, and a refractive index contrast (Δn) of 7 % has been fabricated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Choi, J. K., and Kim, D. H., Lee, J., Yoo, J. B., Surf. Coat. Technol. 131 (2000) 136.Google Scholar
2. Zhang, J., Ren, Z., Liang, R., Sui, Y., and Liu, W., Surf. Coat. Technol 131 (2000) 116.Google Scholar
3. Uetsuka, H., Akiba, K., Morosawa, K., Okano, H., Takasugi, S., and Inaba, K., IEICE Trans. Electron. E80 C (1997) 6194. Google Scholar
4. Kawachi, M., Opt. Quantum Electron. 22 (1990) 391.Google Scholar
5. Bossi, D. E., Hammer, J. M., and Shaw, J. M., Appl. Opt. 26 (1987) 609.Google Scholar
6. Valette, S., Lizet, J., Mottier, P., Jadot, J. P., Renard, S., Frournier, A., Grouillet, A. M., Gidon, P., and Denis, H., Electron. Lett. 19 (1983) 883.Google Scholar
7. Grand, G., Jadot, J. P., Denis, H., Valette, S., Fournier, A., and Grouillet, A. M., Electron. Lett. 26 (1990) 2135.Google Scholar
8. Rastani, S., and Reisman, A., J. Electrochem. Soc. 137 (1997) 1288.Google Scholar
9. Stutius, W., and Streifer, W., Appl. Opt. 16 (1977) 3218.Google Scholar
10. Storgaard-Larsen, T., and Leistiko, O., J. Electrochem. Soc. 144 (1997) 1505.Google Scholar
11. Henry, C. H., Kazarinov, R. F., Lee, H. J., Orlowsky, K. J., and Katz, L. E., Appl. Opt. 26 (1987) 2621.Google Scholar
12. Kawachi, M., Proceedings of the 17th European Conference on Optical Communication, Eighth International Conference on Integrated Optics and Optical Fibre Communication, 1991, p. 51.Google Scholar
13. Bulat, E. S., Tabasky, M., Tweed, B., Herrick, C., Hankin, S., Lewis, N. J., Oblas, D., and Fitzgerald, T., Vac, J.. Sci. Technol. A 11 (4) (1993) 1268.Google Scholar
14. Takato, N., Jinguiji, K., Yasu, M., Toba, H., and Kawachi, M., Lightwave, J. Technol. 6 (1988) 1003.Google Scholar