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Fabrication of p-β-Fe1−x Mnx Si2/n-Si Heterostructure Diode and their Electrical and Optical Properties

  • T. Takada (a1) (a2), H. Katsumata (a1) (a2), Y. Makita (a1), N. Kobayashi (a1), M. Hasegawa (a1) and S. Uekus (a2)...

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[2] Tsunoda, T., Mukaida, M., Watanabe, A., Imai, Y., J. Mater. Res. 11 (1996) 1.
[3] Katsumata, H., Shen, H.L., Kobayashi, N., Makita, Y., Hasegawa, M., Shibata, H., Kimura, S., Obara, A., and Uekusa, S., Proc. of the 9th Int. Conf. on Ion Beam Modification of Materials, (1995) 943.
[4] Katsumata, H., Makita, Y., Shibata, H., Kobayashi, N., Hasegawa, M., Kimura, S., Obara, A., Contributed paper to XV INTERNATIONAL CONFERENCE ON THERMOELECTRICS (Pasadena, Calfolnia, USA).
[5] Kobayashi, N., Katsumata, H., Shen, H.L., Hasegawa, M., Makita, Y., Shibata, H., Kimura, S., Obara, A., and Uekusa, S., and Hatano, T., Thin Solid Films 270 (1995) 406.
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Fabrication of p-β-Fe1−x Mnx Si2/n-Si Heterostructure Diode and their Electrical and Optical Properties

  • T. Takada (a1) (a2), H. Katsumata (a1) (a2), Y. Makita (a1), N. Kobayashi (a1), M. Hasegawa (a1) and S. Uekus (a2)...

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