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Fabrication of Nanocrystalline Si by SiH4 Plasma Cell

Published online by Cambridge University Press:  15 February 2011

Masanori Otobe ,
Tomonori Kanai  and
Shunri Oda
Masanori Otobe
Affiliation:
Department of Physical Electronics and Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
Tomonori Kanai
Affiliation:
Department of Physical Electronics and Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
Shunri Oda
Affiliation:
Department of Physical Electronics and Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
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Abstract

Nanocrystalline silicon (nc-Si) has been fabricated by a very-high-frequency plasma cell attached to an ultra-high-vacuum chamber using SiH4 gas. Nanocrystalline Si is formed in the gas phase of the plasma cell and is extracted out of plasma cell through the orifice to the ultra-high-vacuum chamber. The shape of nc-Si is spherical or octahedral with the diameter of 3–30nm. Giant Si particles about 100nm in diameter are also formed at the lower cell pressure condition. A 1000keV transmission electron microscopy measurement has revealed that the core region of giant Si particle with the diameter about 30nm was crystalline and the shell region is amorphous. We have demonstrated that the spread of particle size can be decreased using pulsed gas supply of H2 into SiH4 plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 51
Copyright
Copyright © Materials Research Society 1995

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References

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