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Fabrication of Ferroelectric Fet with Metal/PZT/SiO2/Si Structure

  • Jun Yu (a1), Wenli Zhou (a1), Jifan Xie (a1), Yuankai Zheng (a1), Xiaoming Dong (a1) and Gang Liu (a1)...

Abstract

We have fabricated a new ferroelectric memory FET, which consists of the Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si gate structure. Ferroelectric PZT thin film with a thickness of 250~400 nm was prepared by using Excimer Laser Ablation Deposition. Silicon oxide successfully served as a buffer layer between ferroelectric and Si substrate to suppress the charge injection and prevent Pb interdiffusion. Electrical properties of the ferroelectric FET have been characterized through both the Capacitance vs. Voltage(C-V) and Current vs. Voltage(I-V) measurements, showing a typical memory characteristics of FET devices, i.e., the ON state and OFF state were nonvolatile for about thirty minutes and several hours, respectively.

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Fabrication of Ferroelectric Fet with Metal/PZT/SiO2/Si Structure

  • Jun Yu (a1), Wenli Zhou (a1), Jifan Xie (a1), Yuankai Zheng (a1), Xiaoming Dong (a1) and Gang Liu (a1)...

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