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Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects

Published online by Cambridge University Press:  15 February 2011

R. Tacito  and
C. Steinbrüchel
R. Tacito
Affiliation:
Department of Materials Science & Engineering and Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180
C. Steinbrüchel
Affiliation:
Department of Materials Science & Engineering and Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

Parylene-n (pa-n) and benzocyclobutene (BCB) are novel candidate materials for interlevel dielectrics in future multilevel interconnects, due to their dielectric constant being much lower than that of silicon dioxide. We describe the fine line patterning of these materials by reactive ion etching in O2/CF4 plasmas. Examples of high aspect ratio trenches and dual damascene structures are presented involving processes with single and double hardmasks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 449
Copyright
Copyright © Materials Research Society 1996

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