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Fabrication of CoSi2 Gate Si Permeable Base Transistor Using Si-MBE

Published online by Cambridge University Press:  22 February 2011

K. Nakagawa ,
T. Ohshima ,
N. Nakamura  and
M. Miyao
K. Nakagawa
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, JAPAN
T. Ohshima
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, JAPAN
N. Nakamura
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, JAPAN
M. Miyao
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, JAPAN
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Abstract

A permeable base transistor (PBT) with submicron grating is fabricated using a Si/COSi2/Si double heterostructure. The high-quality Si/COSi2/Si double heterostructure is formed by two-step moleculer beam epitaxy (i.e. low-temperature MBE and successive high-temperature MBE). The Si and COSi2 interfaces observed by a cross-sectional transmission electron microscope are smooth and atomically abrupt. A new method of patterning COSi2 films is developed. This method uses the difference in surface energies between different crystal orientations. The mutual conductance and cutoff frequency of the PBT are 50 mS/mm and 6 GHz, respectively. These agree with the results of computer simulations. In addition, computer simulations indicate a potential of Si PBT for high frequency application, and a cutoff frequency as high as 90 GHz can be obtained by optimizing the device structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 497
Copyright
Copyright © Materials Research Society 1991

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References

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