Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T18:35:21.834Z Has data issue: false hasContentIssue false
  • English
  • Français

The Fabrication of Complex Membrane Structures in N-GaAs for Micromechanical Applications

Published online by Cambridge University Press:  21 February 2011

J. Miao ,
B.L. Weiss ,
H.L. Hartnagel ,
R.J. Wilson  and
D. Ruck
J. Miao
Affiliation:
Institut fur Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstrasse 25, Darmstadt 64238, Germany Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
B.L. Weiss
Affiliation:
Institut fur Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstrasse 25, Darmstadt 64238, Germany
H.L. Hartnagel
Affiliation:
Institut fur Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstrasse 25, Darmstadt 64238, Germany
R.J. Wilson
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK
D. Ruck
Affiliation:
Gesellschaft fur Schwerionenforschung (GSI), Planckstrasse 1, D-64220, Darmstadt, Germany
Get access

Abstract

A novel process for the fabrication of complex membrane structures in n-GaAs has been developed which utilises high energy nitrogen implantation and annealing to produce a semi-insulating etch stop layer and pulsed anodic etching for the selective removal of material. The process is versatile and can be used to produce complex, single crystal, stress-free, self-supporting membrane structures which are suitable for use as transducers operating up to ∼300°C. The semi-insulating properties of the membrane demonstrates its potential use as a substrate for electronic circuits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 853
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hjort, K., Soderqvist, J. and Schweitz, J.-A., J. Micromech. Microeng. 4, 1, 1994.Google Scholar
2 Bottner, T., Fricke, K., Goldhorn, A., Hartnagel, H.L., Rappl, A., Ritter, S. and Wurfl, J., Proceedings of the First International High Temperature Electronics Conference, Albuquerque, New Mexico, USA, 16–20 June 1991, pp 77–82.Google Scholar
3 Fricke, K., J. Appl. Phys. 70, 914, 1991.Google Scholar
4 Dehe, A., Fricke, K. and Hartnagel, H.L., Sensors and Actuators A 46/47, 432, 1995.Google Scholar
5 Sonderkvist, J. and Hjort, K., J. Micromech. Microeng. 4, 28, 1994.Google Scholar
6 Hjort, K., Schweeger, G., Dehe, A., Fricke, K. and Hartnagel, H.L., Appl. Phys. Lett. 66, 326, 1995.Google Scholar
7 Biersack, J.P. and Haggmark, L.G., Nucl. Inst. & Meth. B 174, 257, 1980.Google Scholar
8 Duncan, W.M. and Matteson, S., J. Appl. Phys. 54, 1059, 1984.Google Scholar
9 Pearton, S., Ren, F., Chu, S., Abernathy, C. and Hodgson, W., J. Appl. Phys. 74, 6580, 1993.Google Scholar
10 Grub, A., Fricke, K. and Hartnagel, H.L., J. Electrochem. Soc. 138, 856, 1991.Google Scholar
11 Miao, J., Hjort, K., Hartnagel, H.L., Schweitz, J.-A., Ruck, D. and Tinschert, K., in Digest of Technical papers of Transducers ‘95. Stockholm, Sweden, June 95, p.604–607 (1995).Google Scholar
12 Fricke, K., Wurfl, J., Miao, J., Dehe, A., Ruck, D. and Hartnagel, H.L., J. Micromech. Microeng. 3, 131, 1993.Google Scholar
13 Wurfl, J., Miao, J., Ruck, D. and Hartnagel, H.L., J. Appl. Phys. 72, 2700, 1992.Google Scholar
14 Miao, J., Weiss, B.L., Hartnagel, H.L. and Wilson, R.J., Électron. Lett. 31, 1047, 1995.Google Scholar