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Fabrication of Carbon Nanotube Triode Using Helicon Plasma Cvd with Electroplated Nico Catalyst

Published online by Cambridge University Press:  15 February 2011

Masakazu Muroyama ,
Kazuto Kimura ,
Takao Yagi  and
Ichiro Saito
Masakazu Muroyama
Affiliation:
SONY Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa, 243-0021, JAPAN
Kazuto Kimura
Affiliation:
SONY Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa, 243-0021, JAPAN
Takao Yagi
Affiliation:
SONY Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa, 243-0021, JAPAN
Ichiro Saito
Affiliation:
SONY Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa, 243-0021, JAPAN
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Abstract

A carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 772: Symposium M – Nanotube-Based Devices , 2003 , M7.4
Copyright
Copyright © Materials Research Society 2003

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