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Fabrication and Optical Pumping of Laser Cavities Made by Cleaving and Wet Chemical Etching

Published online by Cambridge University Press:  10 February 2011

D. Stocker ,
E. F. Schubert ,
W. Grieshaber ,
J. M. Redwing ,
K. S. Boutros ,
J. S. Flynn  and
R. P. Vaudo
D. Stocker
Affiliation:
Physics Department, Boston University, Boston, MA 02215, stocker @ bu.edu
E. F. Schubert
Affiliation:
ECE department, Boston University, Boston, MA 02215
W. Grieshaber
Affiliation:
ECE department, Boston University, Boston, MA 02215
J. M. Redwing
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810-4169
K. S. Boutros
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810-4169
J. S. Flynn
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810-4169
R. P. Vaudo
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810-4169
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Abstract

We report on fabrication and characterization of cleaved laser facets and photoelectrochemically wet etched laser facets in III-Nitrides grown by MOVPE on c-plane sapphire. The roughness of the cleaved facets in the InGaN/GaN double heterostructure (DH) laser cavities with a 1000-Å-thick active region is ≈25 rim, while that of the wet etched GaN facets is ≈100 nm. A theoretical model is developed for the maximum allowable laser facet roughness, which yields a value of 18 nrm for uncoated GaN and 22 rm for the uncoated DH. Optically pumped laser action at room temperature is demonstrated in the cleaved DH laser cavities. 2 Above the incident threshold pumping power of 1.3 MW/cm2, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized. Wet chemical etching a 1-mm-long laser cavity into the GaN homostructure is found to increase the differential quantum efficiency by a factor of 2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1009
Copyright
Copyright © Materials Research Society 1998

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References

1 Hofstetter, Daniel, Bour, David P., Thornton, Robert L., and Johnson, N. M., Appl. Phys. Lett. 70, 1650 (1997).Google Scholar
2 AsifKhan, M., Sun, C. J., Yang, J. W., Chen, Q., Lim, B. W., and Anwar, M. Zubair, Appl. Phys. Lett. 69, 2418 (1996).Google Scholar
3 Shmagin, I. K., Muth, J. F., Kolbas, R. M., and Krishnankutty, S., J. Appl. Phys. 81, 2021 (1997)Google Scholar
4 Nakamura, S., 2nd I nternational Conference on Nitride Semiconductors (1997).Google Scholar
5 Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Sugimoto, Yasunobu, and Kiyoku, Hiroyuki, Appl. Phys. Lett. 70, 1417 (1997).Google Scholar
6 Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Kiyoku, Hiroyuki, and Sugimoto, Yasunobu, Appl. Phys. Lett. 68, 2105 (1996).Google Scholar
7 Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Kiyoku, Hiroyuki, and Sugimoto, Yasunobu, Jpn. J. Appl. Phys. 235, L217 (1996).Google Scholar
8 Itaya, Kazuhiko, Onomura, Masaaki, Nishio, Johji, Sugiura, Lisa, Saito, Shinji, Suzuki, Mariko, Rennie, John, Nunoue, Shin-ya, Yamamoto, Masahiro, Fujimoto, Hidetoshi, Kokubun, Yoshiro, Ohba, Yasuo, Hatakoshi, Gen-ichi, and Ishikawa, Masayuki, Jpn. J. Appl. Phys. 235, L1315 (1996).Google Scholar
9 Lei, T., Ludwig, K. F., Jr., and Moustakas, T. D., J. Appl. Phys. 74, 4430 (1993).Google Scholar