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F+ implants in crystalline Si: the Si interstitial contribution

  • Pedro Lopez (a1), Lourdes Pelaz (a2), Ray Duffy (a3), P. Meunier-Beillard (a4), F. Roozeboom (a5), K. van der Tak (a6), P. Breimer (a7), J. G. M. van Berkum (a8), M. A. Verheijen (a9) and M. Kaiser (a10)...

Abstract

In this work the Si interstitial contribution of F+ implants in crystalline Si is quantified by the analysis of extended defects and B diffusion in samples implanted with 25 keV F+ and/or 40 keV Si+. We estimate that approximately 0.4-0.5 Si interstitials are generated per implanted F+ ion, which is in good agreement with the value resulting from the net separation of Frenkel pairs obtained from MARLOWE simulations. The damage created by F+ implants in crystalline Si may explain the presence of extended defects in F-enriched samples and the evolution of B profiles during annealing. For short anneals, B diffusion is reduced when F+ is co-implanted with Si+ compared to the sample only implanted with Si+, due to the formation of more stable defects that set a lower Si interstitial supersaturation. For longer anneals, when defects have dissolved and TED is complete, B diffusion is higher because the additional damage created by the F+ implant has contributed to enhance B diffusion.

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F+ implants in crystalline Si: the Si interstitial contribution

  • Pedro Lopez (a1), Lourdes Pelaz (a2), Ray Duffy (a3), P. Meunier-Beillard (a4), F. Roozeboom (a5), K. van der Tak (a6), P. Breimer (a7), J. G. M. van Berkum (a8), M. A. Verheijen (a9) and M. Kaiser (a10)...

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