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Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

Published online by Cambridge University Press:  15 February 2011

P.P. Ruden ,
J.D. Albrecht ,
A. Sutandi ,
S.C. Binaril ,
K. Ikossi-Anastasiou ,
M.G. Ancona ,
R.L. Henry ,
D.D. Kolesket  and
A.E. Wickendent
P.P. Ruden
Affiliation:
ECE Department, University of Minnesota, Minneapolis, MN 55455
J.D. Albrecht
Affiliation:
ECE Department, University of Minnesota, Minneapolis, MN 55455
A. Sutandi
Affiliation:
ECE Department, University of Minnesota, Minneapolis, MN 55455
S.C. Binaril
Affiliation:
ECE Department, University of Minnesota, Minneapolis, MN 55455
K. Ikossi-Anastasiou
Affiliation:
ECE Department, University of Minnesota, Minneapolis, MN 55455
M.G. Ancona
Affiliation:
Electronics Science and Technology Div., Naval Research Laboratory, Washington, DC 20375
R.L. Henry
Affiliation:
Electronics Science and Technology Div., Naval Research Laboratory, Washington, DC 20375
D.D. Kolesket
Affiliation:
Electronics Science and Technology Div., Naval Research Laboratory, Washington, DC 20375
A.E. Wickendent
Affiliation:
Electronics Science and Technology Div., Naval Research Laboratory, Washington, DC 20375
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Abstract

Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with lllm gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.35
Copyright
Copyright © Materials Research Society 1999

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