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Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

  • Yasufumi Fujiwara (a1), Atsushi Koizumi (a1), Kentaro Inoue (a1), Akira Urakami (a1), Taketoshi Yoshikane (a1) and Yoshikazu Takeda (a1)...

Abstract

Room-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). Under forward bias, characteristic emission due to a luminescence center consisting of Er coordinated by O and As was clearly observed at room temperature, while the Er-related EL was undetectable under reverse bias. At lower current densities, the EL intensity increased linearly with the current density. Subsequently, the intensity exhibited a tendency to saturate at higher current densities. By analyzing the behavior with a fitting according to rate equations, the excitation cross section of Er ions due to current injection was determined to be approximately 10-15 cm2, which is by five orders in magnitude larger than that for optical excitation in Er-doped fiber amplifiers (10-20∼10-21 cm2).

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Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

  • Yasufumi Fujiwara (a1), Atsushi Koizumi (a1), Kentaro Inoue (a1), Akira Urakami (a1), Taketoshi Yoshikane (a1) and Yoshikazu Takeda (a1)...

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