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Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  11 February 2011

Yasufumi Fujiwara ,
Atsushi Koizumi ,
Kentaro Inoue ,
Akira Urakami ,
Taketoshi Yoshikane  and
Yoshikazu Takeda
Yasufumi Fujiwara
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Atsushi Koizumi
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Kentaro Inoue
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Akira Urakami
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Taketoshi Yoshikane
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Yoshikazu Takeda
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
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Abstract

Room-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). Under forward bias, characteristic emission due to a luminescence center consisting of Er coordinated by O and As was clearly observed at room temperature, while the Er-related EL was undetectable under reverse bias. At lower current densities, the EL intensity increased linearly with the current density. Subsequently, the intensity exhibited a tendency to saturate at higher current densities. By analyzing the behavior with a fitting according to rate equations, the excitation cross section of Er ions due to current injection was determined to be approximately 10-15 cm2, which is by five orders in magnitude larger than that for optical excitation in Er-doped fiber amplifiers (10-20∼10-21 cm2).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M4.8
Copyright
Copyright © Materials Research Society 2003

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References

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