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Extending HgCdTe Photovoltaic Detector Technology to Cutoff Wavelengths of 17 μm

  • E. E. Krueger (a1), G. N. Pultz (a1), K. R. Maschhoff (a1), S. P. Tobin (a1), P. W. Norton (a1), J. H. Rutter (a1) and M. B. Reine (a1)...

Abstract

We are developing two-layer LPE P-on-n HgCdTe photovoltaic detector arrays with cutoff wavelengths out to 17 μm for a NASA spaceborne infrared radiometer. These bilinear multiplexed arrays will operate at 60 K, and must achieve sensitivities approaching the background limit for a background photon flux of 2×1015 photons/cm2-sec. The detectors must operate at reverse bias voltage to interface with silicon CMOS multiplexer circuits, and must exhibit low 1/f noise.

This paper reviews progress toward these demanding requirements. The limiting junction current mechanisms for HgCdTe photodiodes at these very long cutoff wavelengths are reviewed. Data are presented for both CdTe-passivated and ZnS-passivated arrays at 60 K with cutoff wavelengths of 15.4−16.9 μm. Average R0A products of 13 ohm-cm2 and quantum efficiencies of 89% have been achieved for cutoff wavelengths of 15.4 μm at 60 K. These array data demonstrate the potential for VLWIR PV HgCdTe to meet the requirements for advanced NASA applications.

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Extending HgCdTe Photovoltaic Detector Technology to Cutoff Wavelengths of 17 μm

  • E. E. Krueger (a1), G. N. Pultz (a1), K. R. Maschhoff (a1), S. P. Tobin (a1), P. W. Norton (a1), J. H. Rutter (a1) and M. B. Reine (a1)...

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