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Extended Defects in 4H-SiC PiN Diodes

Published online by Cambridge University Press:  11 February 2011

M. E. Twigg ,
R. E. Stahlbush ,
M. Fatemi ,
S. D. Arthur ,
J. B. Fedison ,
J. B. Tucker  and
S. Wang
M. E. Twigg
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington DC, 20375
R. E. Stahlbush
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington DC, 20375
M. Fatemi
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington DC, 20375
S. D. Arthur
Affiliation:
General Electric Corporation Research and Development Center, Niskayana, NY
J. B. Fedison
Affiliation:
General Electric Corporation Research and Development Center, Niskayana, NY
J. B. Tucker
Affiliation:
General Electric Corporation Research and Development Center, Niskayana, NY
S. Wang
Affiliation:
Sterling Semiconductor, Danbury, CT
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Abstract

Using site-specific plan-view transmission electron microscopy (TEM) and lightemission imaging (LEI), we have identified SFs formed during forward biasing of 4H-SiC PiN diodes. These SFs are bounded by Shockley partial dislocations and are formed by shear strain rather than by condensation of vacancies or interstitials. Detailed analysis using TEM diffraction contrast experiments reveal SFs with leading carbon-core Shockley partial dislocations as well as with the silicon-core partial dislocations observed in plastic deformation of 4H-SiC at elevated temperatures. The leading Shockley partials are seen to relieve both tensile and compressive strain during PiN diode operation, suggesting the presence of a complex and inhomogeneous strain field in the 4H-SiC layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K3.7
Copyright
Copyright © Materials Research Society 2003

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References

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