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Explosive Crystallization of Amorphous Germanium Films

Published online by Cambridge University Press:  15 February 2011

H. J. Leamy ,
W. L. Brown ,
G. K. Celler ,
G. Foti ,
G. H. Gilmer  and
J. C. C. Fan
H. J. Leamy
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
W. L. Brown
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
G. Foti
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
G. H. Gilmer
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
J. C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

Laser processing of amorphous thin films of amorphous Ge often results in an explosive or self-sustaining crystallization reaction. The reaction is sustained by the heat liberated during crystallization. In a theoretical analysis of the process that was presented at this symposium last year, Gilmer and Leamy postulated the existence of a thin layer of liquid at the propagating interface. The liquid layer forms at temperatures above Ta, the melting point of amorphous Ge, and is predicted to be ~ 0.02 – 0.1 of the film thickness in width. We have obtained experimental confirmation of the presence of this liquid layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 89
Copyright
Copyright © Materials Research Society 1981

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References

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