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Exploration of Defect Relaxation Dynamics in Hydrogenated Amorphous Silicon using Temperature Switching Experiments

Published online by Cambridge University Press:  16 February 2011

Adam Gardner  and
J. David Cohen
Adam Gardner
Affiliation:
Department of Physics, University of Oregon, Eugene, Oregon 97403, U.S.A.
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, Oregon 97403, U.S.A.
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Abstract

We have carried out a series of charge transient measurements on a-Si:H in which we insert a double temperature step during the period when electrons are being emitted from deep defects. The behavior of this emitted defect charge is completely inconsistent with any density of states that remains static during the emission; that is, defect relaxation must be invoked. Such measurements allow us to separate the temperature dependence of relaxation from that of thermal emission. In particular, we demonstrate that the emission itself exhibits thermally activated behavior in spite of the ongoing relaxation processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 207
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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