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Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures

Published online by Cambridge University Press:  10 February 2011

Ant Ural ,
Peter B. Griffin  and
James D. Plummer
Ant Ural
Affiliation:
Dept. of Electrical Eng., Stanford University, Stanford, CA 94305, antural@leland.stanford.edu
Peter B. Griffin
Affiliation:
Dept. of Electrical Eng., Stanford University, Stanford, CA 94305
James D. Plummer
Affiliation:
Dept. of Electrical Eng., Stanford University, Stanford, CA 94305
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Abstract

Self-diffusion in silicon has been studied using epitaxially grown isotopically enriched structures under nonequilibrium concentrations of intrinsic point defects created by thermal oxidation and nitridation. Comparison of identical anneals for self, antimony, and phosphorus diffusion in silicon enables us to determine bounds on the fractional contributions of microscopic mechanisms for Si self-diffusion in the temperature range 800–1100°C. We obtain direct experimental evidence for a dual vacancy-interstitial mechanism of self-diffusion in silicon and show that the fractional contribution of each mechanism has a weak dependence on temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 97
Copyright
Copyright © Materials Research Society 1999

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References

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