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Experimental and Theoretical Analysis of Resonant Tunneling Through a-Si:H/a-Si1−xCx:H Double-Barrier in p-i-n Structure

Published online by Cambridge University Press:  25 February 2011

Yeu-Long Jiang  and
Huey-Liang Hwang
Yeu-Long Jiang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, R. O. China
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, R. O. China
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Abstract

a-Si:H/a-Si1−x Cx:H double-barrier structure imbedded in the i layer were fabricated by glow discharge. By using the built-in field in the i layer and the external applied bias, the effects of photo-excited carriers driven by electric field in the i layer tunneling through the double-barrier quantum well were examined. Distinct current bumps are distinctly observed when the quantum well structure is imbedded in the middle section of the i layer. A simple theoretical analysis was developed to study the quantum transport behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 687
Copyright
Copyright © Materials Research Society 1989

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References

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