Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-24T15:53:33.327Z Has data issue: false hasContentIssue false
  • English
  • Français

Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates

Published online by Cambridge University Press:  21 February 2011

J.A. Freitas Jr. ,
K. Doverspike  and
A.E. Wickenden
J.A. Freitas Jr.
Affiliation:
Sachs/Freeman Assoc. Inc., Landover MD 20785, Freitas@bloch.nrl.navy.mil Naval Research Laboratory, Washington DC 20375
K. Doverspike
Affiliation:
Hewlett-Packard, San Jose CA 95131
A.E. Wickenden
Affiliation:
Naval Research Laboratory, Washington DC 20375
Get access

Abstract

Excitonic recombination processes in GaN films grown by low pressure metalorganic chemical vapor deposition technique have been studied in the temperature range between 6K to 320K by photoluminescence spectroscopy. Low temperature photoluminescence spectra of high resistivity films show well-resolved spectral features associated with the excitonic interband transitions. A detailed spectral analysis allowed us to estimate the exciton binding energy and the energy gap. Spectral studies of Si-doped GaN films demonstrate that the high energy recombination processes in these films are dominated by excitons bound to neutral Si donors. Comparison between the recombination channels in high resistivity and in Si-doped films indicated that Si has a larger exciton binding energy than the unknown pervasive donor in undoped materials. These results confirm the excellent electronic properties of the undoped and doped films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 485
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, S., to be published in Topical Wokshop on III-V Nitrides, edited by Onabe, K., Fujishiro, S. and Morkoç, H., Nagoya, Japan, 1995.Google Scholar
2 Binari, S.C., to be published in Topical Wokshop on ITJ-V Nitrides, edited by Onabe, K., Fujishiro, S. and Morkoç, H., Nagoya, Japan, 1995.Google Scholar
3 Wickenden, A.E., Rowland, L.B., Doverspike, K., Gaskill, D.K., Freitas, J.A. Jr., Simons, D.S., and Chi, P.H., J. Electron. Mater., 24, p. 1547 (1995).Google Scholar
4 Bishop, S.G. and Freitas, J.A. Jr., J. Cryst. Growth, 106, 38 (1990).Google Scholar
5 Rowland, L.B., Doverspike, K., Giordana, A., Fatemi, M., Gaskill, D.K., Skowronski, M., and Freitas, J.A. Jr., in Silicon Carbide and Related Materials, edited by Spencer, M.G., Devaty, R.P., Edmond, J.A., Khan, M.A., Kaplan, R., Rahman, M. ( Inst. Phys. Conf. Ser., 137, 1989) p. 429 –432.Google Scholar
6 Khan, M.A., Olson, D.T., Kuznia, J. N., Carlos, W.E., and Freitas, J.A. Jr., J. Appl. Phys., 74, 5901 (1993).Google Scholar
7 Dingle, R., Sell, D.D., Stokowski, S.E., Ilegems, M., Phys. Rev. B, 58, 1211 (1971).Google Scholar
8 Grimmeis, H.G. and Monemar, B., J. Appl. Phys., 41, 4054 (1970).Google Scholar
9 Glaser, E.R., Kennedy, T.A., Crookham, H.C., Freitas, J.A. Jr., Khan, M.A., Olson, D.T., and Kuznia, J.N., Appl. Phys. Lett., 63, 2673 (1993).Google Scholar
10 Doverspike, K., Wickenden, A.E., Binari, S.C., Gaskill, D.K., Freitas, J.A. Jr., Simons, D.S., and Chi, P.H., to be published in Topical Wokshop on ITJ-V Nitrides, edited by Onabe, K., Fujishiro, S. and Morkoç, H., Nagoya, Japan, 1995.Google Scholar
11 Shan, W., Schmidt, T.J., Yang, X.H., Hwang, S.J., Song, J.J., and Goldenberg, B., Appl. Phys. Lett., 66, 985 (1995).Google Scholar
12 Freitas, J. A. Jr., Bishop, S.G., Nordquist, P.E.R., and Gipe, M.L., Appl. Phys. Lett., 52, 1695 (1988).Google Scholar
13 Haynes, J.R., Phys. Rev. Lett., 4, 361 (1960).Google Scholar
14 Freitas, J.A. Jr., and Khan, M.A. in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by Carter, C.H. Jr., Gildenblat, G., Nakamura, S., and Nemanich, R.J. (Mater. Res. Proc. 339, Pittsburgh, PA 1994), p. 547–552.Google Scholar
15 Smith, M., Chen, G.D., Li, J.Z., Lin, J.Y., Jiang, H.X., Salvador, A., Kim, W.K., Aktas, O., Botchkarev, A., and Morkoç, H., Appl. Phys. Lett., 67, 3387 (1995).Google Scholar