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Excitation Mechanisms and Light Emitting Device Performances in Er-Doped Crystalline Si

Published online by Cambridge University Press:  10 February 2011

F. Priolo ,
S. Coffa ,
G. Franzo  and
A. Polman
F. Priolo
Affiliation:
INFM and Dipartimento di Fisica dell''Università, Corso Italia 57, 95129 Catania (ITALY)
S. Coffa
Affiliation:
CNR-IMETEM,Stradale Primosole 50, 95100 Catania (ITALY)
G. Franzo
Affiliation:
CNR-IMETEM,Stradale Primosole 50, 95100 Catania (ITALY)
A. Polman
Affiliation:
FOM-AMOLF, Kruislaan 407, 1098 SJ Amsterdam (THE NETHERLANDS)
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Abstract

In this paper the performances of room temperature operating light emitting diodes (LEDs), fabricated by Er ion implantation of crystalline silicon, are investigated in detail. It is shown that 1.54 μm emission is observed under both forward and reverse bias operation, with a much higher intensity under reverse bias. The excitation mechanisms of Er3+ are demonstrated to be very different in the two cases: under forward bias Er is excited through the electron - hole recombination at an Er - related level, while under reverse bias impact excitation by hot carriers represents the excitation process. This last mechanism is shown to occur with a cross section of 6 × 10−17 cm2 and population inversion of the excitable Er sites within the depletion region is demonstrated. The efficiency and limitations of this approach are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 305
Copyright
Copyright © Materials Research Society 1996

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