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Excimer-Laser-Initiated, Dry Etching of Single Crystal GaAs

Published online by Cambridge University Press:  21 February 2011

P. Brewer ,
S. Halle  and
R. M. Osgood
P. Brewer
Affiliation:
Department of Electrical Engineering and Columbia Radiation LaboratoryColumbia University, New York, NY 10027
S. Halle
Affiliation:
Department of Electrical Engineering and Columbia Radiation LaboratoryColumbia University, New York, NY 10027
R. M. Osgood
Affiliation:
Department of Electrical Engineering and Columbia Radiation LaboratoryColumbia University, New York, NY 10027
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Abstract

Gas-phase UV-initiated (193 nm) photodissociations of methyl (CH3) and trifluoromethyl (CF3) containing compounds have been investigated for the dry etching of single crystal GaAs substrates. Etching rates of greater than 1 μ/min. have been observed. Etching rates and surface profiles will be discussed in terms of crystal orientation, reactive etching fragments, and laser-surface interactions. Products of the etching reactions have been examined by UV absorption, mass spectrometry and laser-induced fluorescence techniques. Applications to large scale and micron dimension etching processes will be briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 179
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Ehrlich, D. J., Osgood, R. M. Jr., and Deutsch, T. F., Appl. Phys. Lett. 36, 698 (1980).CrossRefGoogle Scholar
2. Krchnavek, R., Gilgen, H., Brewer, P., Halle, S., and Osgood, R. M. Jr., Conf. on Lasers and Electro-optics, Baltimore, MD (May 17–20, 1983).Google Scholar
3. Chen, J. and Osgood, R. M. Jr., J. Chem. Phys. (in press).Google Scholar
4. Moore, C., Atomic Energy Levels, Vol. 1–3, NSRDS-NBS35 (U.S. Gov. Printing Office, Washington, D.C. reissued 1971).Google Scholar
5. Houle, F., Chem. Phys. lett. (in press).Google Scholar