Hostname: page-component-5c6d5d7d68-txr5j Total loading time: 0 Render date: 2024-08-19T10:42:43.294Z Has data issue: false hasContentIssue false
  • English
  • Français

Excimer-Laser Crystallization of Si Films Via Bi-Directional Irradiation of Dual-Layer Films on Transparent Substrates

Published online by Cambridge University Press:  15 February 2011

Jung H. Yoon  and
James S. Im
Jung H. Yoon
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY 10027
James S. Im
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY 10027
Get access

Abstract

In this paper, we report on a new excimer-laser crystallization (ELC) method that is highly effective in extending the super-lateral growth (SLG) distance and which does not involve any preheating of the substrate. The technique utilizes bi-directional irradiation of a dual layer Si film stack (separated by an oxide layer) deposited on a quartz wafer. The top layer is irradiated with a projection system which transfers a mask image in order to produce grain-boundary-location-controlled (GLC) regions, and the bottom layer, upon irradiation with a uniform beam, acts as a medium that favorably affects the thermal evolution of the top layer. The technique is effective and attractive in that the heating is spatially and temporally localized in an optimal manner. The thermal environment required for extending the SLG distance, as is induced by the melting and solidification of the bottom layer, is physically regulated by the melting temperature of Si, and the enthalpy difference between liquid and solid can be used to initially store and subsequently release heat. Using the method, we were able to attain GLC regions with widths up to 10 μm in 1000-Å Si films without any substrate heating. We elaborate on the applicability of the method to various artificially controlled super-lateral growth (ACSLG) techniques, and discuss process optimization by means of varying the multilayer configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 453
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Yamauchi, N. and Reif, R., J. Appl. Phys. 75 (1994) 3235.Google Scholar
2 Kim, H.J. and Im, James S., Mat. Res. Soc. Symp. Proc, 358, 903 (1995)Google Scholar
3 Jin Song, H. and Im, James S., to be published within this proceeding.Google Scholar
4 Im, James S. and Sposili, Robert S., to be published in Materials Research Society Bulletin, vol. xxi, No. 3 (1996).Google Scholar
5 Im, James S. and Kim, H.J., Appl. Phys. Lett. 64, 2303 (1994).Google Scholar
6 Im, James S., Kim, H.J., and Thompson, Michael O., Appl. Phys. Lett. 63, 1969 (1993), H.J. Kim, James S. Im, and Michael O. Thompson, Mat. Res. Soc. Symp. Proc. 283, 703 (1993).Google Scholar
7 Givargizov, E.I., Oriented Crystallization on Amorphous Substrates, (New York: Plenum Press, 1991).Google Scholar