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Excimer Laser Recrystallization of Selectively Floating a-Si Active Layer for Large-Grained Poly-Si Film

  • Cheon-Hong Kim (a1), Juhn-Suk Yoo (a1), In-Hyuk Song (a1) and Min-Koo Han (a1)

Abstract

We report a new excimer laser annealing method by employing selectively floating a-Si active layer structure in order to increase the grain size of poly-Si film. The floating a-Si region blocks the heat conduction into the underlying substrate due to high thermal-insulating property of an air so that the lateral temperature gradient is successfully induced by the proposed simple air-gap structure. Our experimental results show that large grains were grown in the lateral direction from the edge to the center of the floating active region. The large grains exceeding 4 m were successfully obtained with only one laser irradiation.

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1. Hack, M., Mei, P., Lujan, R. and Lewis, A. G., JNCS 164–166, 727730 (1993).
2. Im, J. S., and Kim, H. J., Appl. Phys. Lett. 63, 1969 (1993).
3. Jeon, J. H., Lee, M. C., Park, K. C., Jung, S. H., and Han, M. K., IEDM Tech. Dig., 213 (2000).
4. Sposili, R. S. and Im, J. S., Appl. Phys. Lett. 69, 2864 (1996).10.1063/1.117344
5. Choi, D. H., Shimizu, K., Sugiura, O. and Matsumura, M., Jpn. J. Appl. Phys. 31, 4545 (1992).

Excimer Laser Recrystallization of Selectively Floating a-Si Active Layer for Large-Grained Poly-Si Film

  • Cheon-Hong Kim (a1), Juhn-Suk Yoo (a1), In-Hyuk Song (a1) and Min-Koo Han (a1)

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