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Excimer Laser Photodissociation Studies of Disilane AT 193 nm

Published online by Cambridge University Press:  25 February 2011

J. M. Jasinski ,
J. O. Chu  and
M. H. Begemann
J. M. Jasinski
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, 10598
J. O. Chu
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, 10598
M. H. Begemann
Affiliation:
Department Of Chemistry, Vassar College, Poughkeepsie, NY, 12601
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Abstract

Optical emission, laser spectroscopic and mass spectrometric techniques have been used to study the ArF excimer laser induced photochemistry of disilane at 193 nm. Evidence is found for the formation of a number of photofragments from single and multiphoton dissociation. Effects due to secondary photolysis are observed at high excimer laser repetition rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 487
Copyright
Copyright © Materials Research Society 1989

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References

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