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Excimer Laser Induced Deposition of Tungsten from W(CO)6 and WF6

Published online by Cambridge University Press:  21 February 2011

Berthold Rager  and
Friedrich Bachmann
Berthold Rager
Affiliation:
Siemens AG, Corp. Production and Logistics Department. Otto-Hahn-Ring 6,D-8000 Munich 83, Fed.Rep., Germany
Friedrich Bachmann
Affiliation:
Siemens AG, Corp. Production and Logistics Department. Otto-Hahn-Ring 6,D-8000 Munich 83, Fed.Rep., Germany
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Abstract

ArF laser induced deposition of W from W(CO)6 and WF6 on Si/SiO2 surfaces was investigated. With an in-situ reflectivity measurement the growth of the layer could be monitored during the deposition process. We find that the initial stage of layer growth as well as the reflectivity as a function of deposition time depends on the laser fluence and on other deposition parameters. Model calculations, using the optical constants of deposited films, determined by ellipsometry, have been performed to compare the measured reflectivity curves with the calculated curves. The deposited layers have been analyzed by XPS, AES, X-ray Diffraction and Raman Spectroscopy. Additionally, experiments of direct pattern transfer deposition (via contact mask) with W(CO)6 show the presence of an involved surface process, which by Fresnel diffraction caused structures smaller than 0.5μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 161
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Hirose, M., Annual Research Report, 11 (1989), Department of Electrical Engineering, Hiroshima University Google Scholar
2. Matsuhashi, A., Nishikawa, S. and Ohno, S., Jap.J.Appl.Phys., 27 L2116 (1988)Google Scholar
3. Blonder, G.E., Higashi, G.S. and Flemming, C.G., Appl.Phys. Lett., 50, 766 (1987)Google Scholar
4. Chin, M.S., Tseng, Y.G. and Ku, Y.K., Optics letters, 10, 113 (1985)Google Scholar
5. Jackson, R.L., Tyndall, G.W. and Sathers, S.D., Appl.Surf.Sci., 36, 119 (1989)Google Scholar
6. Flynn, D.K. and Steinfeld, J.I., J.Appl.Phys., 59, 3914 (1986)Google Scholar
7. Radloff, W., Hohmann, H., Ritze, H.-H. and Paul, R., Appl.Phys. B 49, 301 (1989)Google Scholar
8. Jackson, R.L. and Tyndall, G.W., J.Appl.Phys., 64, 2092 (1988)Google Scholar
9. Gluck, N.S., Wolga, G.J., Bartosch, C.E., Ho, W. and Ying, Z., J.Appl.Phys., 61, 918 (1987)Google Scholar
10. Wagner, C.D., Riggs, W.M., Davis, L.E., Moulden, J.F., Muilenberg, G.E. (Ed.), Handbook of X-Ray-Photoelectron Spectroscopy, Perkin Elmer Corp. 1979 Google Scholar
11. Shigesato, Y., Murayama, A., Kamimoni, T. and Matsuhiro, K., Appl. Surf. Sci., 33/34, 804 (1988)Google Scholar
12. Born, M. and Wolf, E., Principles of Optics, Pergamon Press 1970 (4th Ed.)Google Scholar