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Excimer Laser Annealing Effect on MILC Polycrystalline Silicon Film

  • Kee-Chan Park (a1), In-Hyuk Song (a1), Sang-Hoon Jung (a1) and Min-Koo Han (a1)

Abstract

XeCl excimer laser was irradiated on metal induced laterally crystallized (MILC) polycrystalline silicon (poly-Si) film in order to eliminate the intra-grain defects of MILC poly-Si film which incorporated 2 μm wide metal induced crystallized (MIC) poly-Si line pattern. On the irradiation of the laser beams, different melt and recrystallization phenomena were observed in the MILC and the MIC poly-Si region due to the Ni content difference in each film. The transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) measurements indicated that the melting temperature of the poly-Si film decreased as the Ni content increased. With the laser irradiation energy density of 370 mJ/cm2, 2 μm long defect-free poly-Si grain was successfully grown in the MILC poly-Si due to the melting temperature variation at the MILC-MIC poly-Si boundary.

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References

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1. Jin, Z., Bhat, G.A., Yeung, M., Kwok, H.S. and Wong, M., J. Appl. Phys., 84, 194 (1998).
2. Lee, S.W. and Joo, S.K., IEEE Electron Device Lett. 17, 160 (1996).
3. Wong, M., Jin, Z., Bhat, G.A., Kwok, H.S. et al. , IEEE Trans. Elec. Dev., 47, 1061 (2000).
4. Crowder, M.A., Carey, P.G., Smith, P.M., Im, J.S., et al. , IEEE Elec. Dev. Lett. 19. 306 (1998).
5. Oh, C.H. and Matsumura, M., IEEE Elec. Dev. Lett. 22, 20 (2001).
6. Im, J., Kim, H.J. and Thompson, M.O., Appl. Phys. Lett. 63, 1969 (1993).

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