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Exchange Coupling and Giant Magnetoresistance in Electrodeposited Co/Cu Multilayers

Published online by Cambridge University Press:  15 February 2011

A. Dinia
Affiliation:
1-IPCMS-GEMM, UMR 46 CNRS-ULP, 23 rue du Loess 67037 Strasbourg, France
K. Rahmouni
Affiliation:
1-IPCMS-GEMM, UMR 46 CNRS-ULP, 23 rue du Loess 67037 Strasbourg, France
G. Schmerber
Affiliation:
1-IPCMS-GEMM, UMR 46 CNRS-ULP, 23 rue du Loess 67037 Strasbourg, France
H. El Fanity
Affiliation:
2-Faculté des Sciences, B.P. 1014, Rabat, Maroc
M. Bouanani
Affiliation:
2-Faculté des Sciences, B.P. 1014, Rabat, Maroc
F. Cherkaoui
Affiliation:
2-Faculté des Sciences, B.P. 1014, Rabat, Maroc
A. Berrada
Affiliation:
2-Faculté des Sciences, B.P. 1014, Rabat, Maroc
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Abstract

We present the results of the transport and magnetization measurements of electrodeposited Co/Cu multilayers grown in a single electrolyte based on C0SO4, H3BO3 and CuSO4. The samples are deposited on glass substrate covered by a 500 Å thick Cu buffer layer. X-ray diffraction performed on the samples shows fee structure of both Co and Cu layers with preferential (111) orientation. Resistivity measurements show a giant magnetoresistance effect of about 4% at room temperature for multilayers with Co and Cu thickness between 4 nm ≤ tco ≤ 6 nm and 3 nm ≤ tcu ≤4 nm respectively. For Co thickness tCo ≤ 15 nm, the magnetoresistance completely vanishes indicating that there is no more continuous Co layer. The indirect antiferromagnetic exchange coupling between magnetic Co layers is relatively large for 4 nm thick Cu spacer layer and gives rise to a temperature dependence of about 30% between room temperature and 4.2 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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