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Exafs Studies of the Difference in Local Structure of Various Tantalum Oxide Capacitor Films

Published online by Cambridge University Press:  21 February 2011

H. Kimura ,
J. Mizuki ,
S. Kamiyama  and
H. Suzuki
H. Kimura
Affiliation:
Fundamental Research Labs., NEC Corporation, Miyukigaoka, Tsukuba, Ibaraki 305, Japan
J. Mizuki
Affiliation:
Fundamental Research Labs., NEC Corporation, Miyukigaoka, Tsukuba, Ibaraki 305, Japan
S. Kamiyama
Affiliation:
ULSI Device Development Labs., NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
H. Suzuki
Affiliation:
ULSI Device Development Labs., NEC Corporation, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

The extended x-ray absorption fine structure (EXAFS) above the Ta L3-edge on tantalum oxide capacitor films has been measured. Four kinds of tantalum oxide films were studied: as-deposited (amorphous), dry 02 annealed (crystalline), 02-plasma annealed (amorphous) and 2-step (02-plasma + dry O2) annealed (crystalline). From EXAFS analysis, differences in the local structures of tantalum oxide capacitor films, in terms of oxygen deficiency around Ta, were observed in the various annealed films. The leakage current characteristics of tantalum oxide capacitors correspond with the differences in the local structures around Ta. The discussion looks at the relationship between the leakage current characteristics and the local structures around Ta.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 489
Copyright
Copyright © Materials Research Society 1995

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References

1 Sunami, H., Kure, T., Hashimoto, N., Itoh, K., Toyabe, T., and Asai, S., IEEE Trans. Electron Devices, ED–31,746 (1984).Google Scholar
2 Yugami, J., Mine, T., Iijima, S., and Hiraiwa, A., 20th Conf. on Solid State Devices Materials (Tokyo), 173 (1989).Google Scholar
3 Zaima, S., Furata, T., and Yasuda, Y., J. Electrochem. Soc. 137,1297 (1990).Google Scholar
4 Shinriki, H., and Nakata, M., IEEE Trans. Electron Devices. 38,455 (1991).Google Scholar
5 Shinriki, H., Hiratani, M., Nakano, A., and Tachi, S., Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials (Yokohama), 198 (1991).Google Scholar
6 Oehrlein, G.S., d'Heurle, F. M., and Reisman, A., J. Appi. Phys. 55,3715 (1984).Google Scholar
7 Knausenberger, W.H., and Tauber, R.N., J. Electrochem. Soc. 120,927 (1973).Google Scholar
8 Roberts, S., Ryan, J., and Nesbit, L., J. Electrochem. Soc. 133,1405 (1986).Google Scholar
9 Kamiyama, S., Lesaicherre, P. Y., Suzuki, H., Sakai, A., Nishiyama, I., and Ishitani, A., J. Electrochem. Soc. 140,1617 (1993).Google Scholar
10 Kamiyama, S., Suzuki, H., Watanabe, H., Sakai, A., and Ishitani, A., Kimura, H., and Mizuki, J., J. Electrochem. Soc. 141,1246 (1994).Google Scholar
11 Kimura, H., Mizuki, J., Kamiyama, S., and Suzuki, H. (submit to Appi. Phys. Lett.)Google Scholar
12 Maeda, H., J. Phys. Soc. Jpn. 56,2777 (1987).Google Scholar