Skip to main content Accessibility help
×
Home

Exafs Studies of Group III-Nitrides

  • N J Jeffs (a1), A V Blant (a1), T S Cheng (a1), C T Foxon (a1), C Bailey (a2), P G Harrison (a2), J F W Mosselmans (a3) and A J Dent (a3)...

Abstract

The group III nitrides have important applications for blue/green LEDs, blue/UV laser diodes and for high-power high frequency FETs. In all such devices the alloys play an important role either in the active part of the structure or in the cladding regions. The properties of the group III-nitride alloys are not at present well understood and in particular there are indications that phase separation can occur. We have undertaken a comprehensive study of (InGa)N alloys using EXAFS in order to study such problems.

We have demonstrated recently that REFLEXAFS technique can be used to give interatomic distances for (InGa)N alloys using the In edge to measure the bond lengths as a function of In content over the complete range from InN to GaN. We have now extended this study by using the Total Electron Yield (TEY) EXAFS technique to study the bond lengths by using both the Ga and In edges for (InGa)N alloys. The TEY data for the (InGa)N alloy samples gives more reliable data for the In-In and In-Ga separations than the earlier REFLEXAFS studies. Data obtained for the In-Ga separation from the Ga and In edges agree well within experimental error.

The data obtained from this study suggest that the (InGa)N samples grown at low temperature do not exhibit evidence for phase separation.

Copyright

References

Hide All
[1] Ho, I-hsiu and Stringfellow, G B, Appl Phys Lett, 69 2701 (1996).
[2] Blant, A V, Cheng, T S, Jeffs, N J, Foxon, C T, Bailey, C, Harrison, P G, Dent, A J, and Mosselmans, J F W, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 50 (1–3) 38 (1997).
[3] Schroeder, S L M, Moggridge, G D, Chabala, E, Ormerod, R M, Rayment, T, and Lambert, R M, Faraday Discussions 105 317 (1996).
[4] Strite, S and Morkoc, H, J Vac Sci Technol, B10 1237 (1992).
[5] Nakamura, S, Senoh, M, Nagahama, S-I, Iwasa, N, Yamada, T, Matsushita, T, Kiyoku, H and Sugimoto, Y, Jpn J Appl Phys, 35, L74 (1996).
[6] Cheng, T S, Jenkins, L C, Hooper, S E, Foxon, C T, Orton, J W and Lacklison, D E, App Phys Lett, 66 1509 (1995).
[7] Orton, J W, Lacklison, D E, Baba-Ali, N, Foxon, C T, Cheng, T S, Novikov, S V, Johnston, D F C, Hooper, S E, Jenkins, L C, Challis, L J and Tansley, T L, J.Electronic Materials, 24 263 (1995).
[8] Hooper, S E, Foxon, C T, Cheng, T S, Jenkins, L C, Lacklison, D E, Orton, J W, Bestwick, T, Kean, A, Dawson, M and Duggan, G, J Cryst Growth, 150 892 (1995).
[9] Kazakov, S V, Konnikov, S G and Tret'yakov, V V, Izv.Akad.Nauk SSSR, 55 1627 (1991).
[10] Blant, A. V., Cheng, T. S., Foxon, C. T., Bussey, J. C., Novikov, S.V. and Tret'yakov, V. V., Materials Research Society Symposium Proceedings 438, 465 (1996).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed