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Evolution of the Microstructure During Laser-Induced Amorphization of Si

Published online by Cambridge University Press:  26 February 2011

J.A. Yater  and
Michael O. Thompson
J.A. Yater
Affiliation:
Departincnt of Materials Science, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Departincnt of Materials Science, Cornell University, Ithaca, NY 14853
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Abstract

The interface growth dynamics of Si leading to laser-induced amorphization have been studied as a function of incident energy density and crystallographic orientation using tran-smission electron microscopy (TEM). Using lithographic and dry etching techniques, cross sectional TEM specimens across the entire melt region were produced. These samples allowed observation of the evolution of the amorphous thickness and crystal defect structure from shallow anmorphous Si (a-Si) formation near the melt threshold energy density to crystallized material (c-Si) at higher energy densities. For surfaces near [111] orientations, marked differences in the solidification behavior were observed as compared to [001] or [110] orientations. The transition to a-Si growth at the moving liquid/crystal interface is discussed in terms of interface response function kinetics and crystallization models. A growth instability model, arising from the shape of the interface response function, is proposed to explain the observed nmicrostructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 93
Copyright
Copyright © Materials Research Society 1992

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