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Evolution of Intrinsic Stress During Nucleation and Growth of Polycrystalline Tungsten Films by Chemical Vapor Deposition.

Published online by Cambridge University Press:  22 February 2011

G. J. Leusink ,
T. G. M. Oosterlaken ,
G. C. A. M. Janssen  and
S. Radelaar
G. J. Leusink
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O.Box 5046, 2600 G A, Delft, the Netherlands
T. G. M. Oosterlaken
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O.Box 5046, 2600 G A, Delft, the Netherlands
G. C. A. M. Janssen
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O.Box 5046, 2600 G A, Delft, the Netherlands
S. Radelaar
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O.Box 5046, 2600 G A, Delft, the Netherlands
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Abstract

We present in situ measurements of the intrinsic (growth) stress during nucleation and growth of thin tungsten films by chemical vapor deposition. It is shown that interfering stress sources, as recrystallization or plasic flow, do not contribute to the intrinsic stress in these films. This makes W-CVD a model system for the experimental study of the relation between the evolution of microstructure and the development ofgrowth stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 139
Copyright
Copyright © Materials Research Society 1992

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References

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