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Evolution of Intrinsic Stress During Nucleation and Growth of Polycrystalline Tungsten Films by Chemical Vapor Deposition.

  • G. J. Leusink (a1), T. G. M. Oosterlaken (a1), G. C. A. M. Janssen (a1) and S. Radelaar (a1)

Abstract

We present in situ measurements of the intrinsic (growth) stress during nucleation and growth of thin tungsten films by chemical vapor deposition. It is shown that interfering stress sources, as recrystallization or plasic flow, do not contribute to the intrinsic stress in these films. This makes W-CVD a model system for the experimental study of the relation between the evolution of microstructure and the development ofgrowth stress.

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1. Hoffman, R.W., Thin Solid Films, 34, 185 (1976)
2. Rottmayer, R.E. and Hoffman, R.W., J. Vac. Sci. Technol., 151 (1971)
3. Chaudhari, P., J. Vac. Sci. Technol., 9, 520 (1972)
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5. See for example the papers contained in Tungsten and Other Refractory Metals for VLSI Applications I - IV (Materials Research Society, Pittsburgh, PA)
6. Leusink, G.J., Heerkens, C.Th.H., Janssen, G.C.A.M. and Radelaar, S., Evolution of Thin Film and Surface Microstructure, Proc. of the MRS 1990 Fall Meeting, Boston Ma. Vol 202, p. 211
7. Leusink, G.J., Oosterlaken, T.G.M., Janssen, G.C.A.M. and Radelaar, S., submitted for publication in Rev. Sci. Instrum.
8. Townsend, P. H., Barnett, D.M. and Brunner, T.A., J. Appl. Phys. 62, 4438 (1987)

Evolution of Intrinsic Stress During Nucleation and Growth of Polycrystalline Tungsten Films by Chemical Vapor Deposition.

  • G. J. Leusink (a1), T. G. M. Oosterlaken (a1), G. C. A. M. Janssen (a1) and S. Radelaar (a1)

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