Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-13T11:31:41.041Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence for Oxygen Concentration Changes Induced by Low-Temperature 0–18 Implantation into a SIMOX Buried-Oxide Layer

Published online by Cambridge University Press:  28 February 2011

P.J. Scanlon ,
P.L.F. Hemment ,
A.K. Robinson ,
K.J. Reeson ,
R.J. Chater ,
J.A. Kilner  and
G. Harbeke
P.J. Scanlon
Affiliation:
Queen's University, Kingston, Ontario, Canada
P.L.F. Hemment
Affiliation:
University of Surrey, Guildford, England
A.K. Robinson
Affiliation:
University of Surrey, Guildford, England
K.J. Reeson
Affiliation:
University of Surrey, Guildford, England
R.J. Chater
Affiliation:
Imperial College, London, England
J.A. Kilner
Affiliation:
Imperial College, London, England
G. Harbeke
Affiliation:
SIN c/o Laboratories RCA, Zurich, Switzerland
Get access

Abstract

RBS, SIMS, and IR measurements have been made on a SIMOX wafer, implanted with a second, low-temperature oxygen implant. These measurements indicate changes in the oxygen/silicon ratio in the buried oxide layer and differences in the annealing behaviour of the original layer and the double implant layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 141
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Namavar, F., Budnick, T.I., Sanchez, F.H., and Hayden, H.C., Proc. Mat. Res. Soc. 53, 233 (1986).Google Scholar