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Evidence for Island Growth on Deposition of Silver Onto Si(111)7 × 7 at Room Temperature

  • E. J. Van Loenen (a1), M. Iwami (a1), R. M. Tromp (a1), J. F. Van Der Veen (a1) and F. W. Saris...

Abstract

The growth process of silver deposited onto the Si(111) 7 × 7 surface at room temperature was studied with medium energy ion scattering in combination with channelling. Coverages studied were in the range 0−8 × 1015 Ag atoms cm−2. The measurements show that silver forms three-dimensional islands. Although incorporation of small amounts of silicon in the silver islands (less than 8 × 10−4 Si atoms cm−2) cannot be excluded, no evidence was found for mixing between silver and silicon or for silicide formation.

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Also at Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305, U.S.A.

References

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