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Evaluation of PTFE Nanoemulsion as a Low Dielectric Constant Material ILD

Published online by Cambridge University Press:  15 February 2011

S. C. Sun ,
Y. C. Chiang ,
C. T. Rosenmayer ,
J. Teguh  and
H. Wu
S. C. Sun
Affiliation:
National Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C. Now with Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan.
Y. C. Chiang
Affiliation:
National Nano Device Laboratory, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
C. T. Rosenmayer
Affiliation:
W. L. Gore & Associates, Inc., 1414 W. Hamilton Ave., Eau Claire, WI 54701, trosenma@wlgore.com
J. Teguh
Affiliation:
W. L. Gore & Associates, Inc., 1414 W. Hamilton Ave., Eau Claire, WI 54701, trosenma@wlgore.com
H. Wu
Affiliation:
W. L. Gore & Associates, Inc., 1414 W. Hamilton Ave., Eau Claire, WI 54701, trosenma@wlgore.com
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Abstract

Polytetrafluoroethylene (PTFE) has been studied as a low dielectric constant material for ULSI. A novel nanoparticle dispersion of PTFE was developed that permits the spin-coat deposition of PTFE with a thickness range of 0.2 to 1.5 μm. These PTFE nanoemulsions are aqueous emulsions containing sub-50 nm size PTFE particles and surfactant that are thermodynamically stable, optically clear, and have low viscosity and surface tension. The films cast from this nanoemulsion are uniform in thickness with a standard deviation of < 2%. From FTIR spectra, significant amounts of C-F bonds (1153 cm−1 and 1211 cm−1) are detected in the films. The index of refraction from ellipsometry measurement is about 1.35 and the dielectric constant measured from high frequency C-V curves is about 1.85. The dielectric strength is about 170 V/ μm. TGA data indicates a weight loss rate of less than 0.25%/hr. at 425 °C. The moisture absorption is less than 0.01%. After sintering, the films are extremely resistant to chemical attack by sulfuric acid, buffered HF, and positive photoresist developer. The etch rate in an oxygen plasma at 30 W is around 200 nm/min. Stud pull tests indicate good adhesion to SiO2, Al, and Cu. Results of thermal, dielectric, chemical, and adhesion tests indicate that these PTFE films have potential for use as an integrated circuit dielectric material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 85
Copyright
Copyright © Materials Research Society 1997

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References

1 Low Dielectric Constant Materials – Synthesis and Applications in Microelectronics edited by Lu, T. M., et al, (Mater. Res. Soc. Proc. 381, Pittsburgh, PA,1995).Google Scholar
2 Advanced Metallization for Future ULSI edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J., (Mater. Res. Soc. Proc. 427, Pittsburgh, PA, 1996).Google Scholar
3 Advanced Metallization for Future ULSI edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J., (Mater. Res. Soc. Proc. 427, Pittsburgh, PA, 1996)., p. 261–266.Google Scholar
4 Advanced Metallization for Future ULSI edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J., (Mater. Res. Soc. Proc. 427, Pittsburgh, PA, 1996)., p. 79–92 Google Scholar
5 Advanced Metallization for Future ULSI edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J., (Mater. Res. Soc. Proc. 427, Pittsburgh, PA, 1996)., p. 105–110 Google Scholar
6 Hiraoka, Hiroyuki and Lazare, Sylvain, Applied Surface Science 46 342–347 (1990).Google Scholar
7 Licari, James J. and Hughes, Laura A., Handbook of Polymer Coatings for Electronics, 2nd edition, (Noyes Publications, Park Ridge, NJ, 1990) pp. 65–73.Google Scholar
8 Rosenmayer, Tom and Wu, Huey in Advanced Metallization for Future ULSI edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J. (Mater. Res. Soc. Proc. 427, Pittsburgh, PA 1996) p. 463–468.Google Scholar
9 Licari, James J. and Hughes, Laura A., Advanced Metallization for Future ULSI edited by Tu, K. N., Mayer, J. W., Poate, J. M, and Chen, L. J. (Mater. Res. Soc. Proc. 427, Pittsburgh, PA 1996) p. 463–468.Google Scholar