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Evaluation Of Proton-Induced Deep Levels In n-Si

Published online by Cambridge University Press:  15 February 2011

K. Kono ,
N. Kishimoto ,
H. Amekura  and
T. Saito
K. Kono
Affiliation:
National Research Institute for Metals (NRIM), High Resolution Beam Research Station, 1–2–1 Sengen, Tsukuba, Ibaraki, 305, Japan, kono@nrim.go.jp
N. Kishimoto
Affiliation:
National Research Institute for Metals (NRIM), High Resolution Beam Research Station, 1–2–1 Sengen, Tsukuba, Ibaraki, 305, Japan, kono@nrim.go.jp
H. Amekura
Affiliation:
National Research Institute for Metals (NRIM), High Resolution Beam Research Station, 1–2–1 Sengen, Tsukuba, Ibaraki, 305, Japan, kono@nrim.go.jp
T. Saito
Affiliation:
National Research Institute for Metals (NRIM), High Resolution Beam Research Station, 1–2–1 Sengen, Tsukuba, Ibaraki, 305, Japan, kono@nrim.go.jp
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Abstract

Deep level transient spectroscopy (DLTS) has been conducted to reveal electronic states of deep centers in n-Si, under 17 MeV-proton irradiation. The DLTS device was installed into the beam line of the cyclotron. The in-situ experiment was concentrated on, to study the dynamical defect evolution and the effect of irradiation temperature on the deep centers. DLTS signals of four deep levels E0-E3 were observed when n-Si was irradiated at 300 K. Three of the four peaks were identified as V-O, V-V2− and P-V centers, in comparison with the past data of electron irradiation. The other unknown level (EO) was located at 0.16 eV below the conduction band, and 0.02 eV lower than the V-O level. The E0 peak showed a characteristic behavior dependent on the irradiation temperature. The EQ did not emerge when irradiated at 200 K, but appeared after being annealed at 300 K following the 200 K irradiation. The evolution of these levels was consecutively investigated with accumulating the proton fluence and with annealing after the irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 287
Copyright
Copyright © Materials Research Society 1997

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