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Evaluation of Lamp Zone-Melting Recrystallization

Published online by Cambridge University Press:  28 February 2011

P.W. Mertens ,
D.J. Wouters ,
K.J. Yallup  and
H.E. Maes
P.W. Mertens
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
D.J. Wouters
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
K.J. Yallup
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
H.E. Maes
Affiliation:
Interuniversitair Micro-Electronica Centrum, Kapeldreef 75, B-3030 Leuven Belgium
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Abstract

The intensity profiles of various kinds of topheaters are compared and discussed. Using the mercury-arc lamp heater experiments on polycrystalline silicon layers of thicknesses varying from 1 to 10 urn were performed. The 10 fiva layers were polished prior to recrystallization. After zone melting recrystallization they showed a strong (100) texture combined with an alignment of the [010] direction with the scan direction. By patterning 1 ¼m poly-silicon films into isolated narrow silicon stripes, the kinetic mechanism that is shown to be responsible for the alignment of the [010] direction along the scan direction could be inhibited. In this way other mechanisms that influence the orientation could be studied. Finally some electrical characteristics are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 221
Copyright
Copyright © Materials Research Society 1988

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References

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