Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-24T12:44:50.067Z Has data issue: false hasContentIssue false
  • English
  • Français

Evaluation of Copper Ion Drift in Low-Dielectric-Constant Interlayer Films by Transient Capacitance Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Takenobu Yoshino ,
Nobuhiro Hata  and
Takamaro Kikkawa
Takenobu Yoshino
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, 305-8569, Japan.
Nobuhiro Hata
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, 305-8569, Japan.
Takamaro Kikkawa
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, 305-8569, Japan. Research Center for Nanodevices and Systems (RCNS), Hiroshima University, Higashi-Hiroshima, 739-8527, Japan.
Get access

Abstract

The evidence of copper (Cu) ion drift in low-dielectric-constant (low-k) interlayer films is clearly shown by transient capacitance measurements for the first time. The bias-temperaturestress (BTS) was applied to the copper electrode of Cu/low-k/p-Si metal-insulator-semiconductor capacitors. After injecting photoelectrons into the low-k film from the substrate, time-dependence of the capacitance was measured. When BTS-applied samples were measured, a decrement of the capacitance was observed, whereas not observed without BTS. The decrement of the capacitance was attributed to thermal emission of electrons from copper-related electronic states. By assuming an attempt-to-escape frequency of the charge from the electronic states, the energy level of Cu was estimated to be 0.8–0.9 eV below the conduction band edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E1.7
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kikkawa, T., Electronics and Communications in Japan 84, 26 (2001).Google Scholar
2. McBrayer, J. D., Swanson, R. M., and Sigmon, T. W., J. Electrochem. Soc. 133, 1242 (1986).Google Scholar
3. Diamond, Y. S., Dedhia, A., Hoffstetter, D., and Oldham, W., J. Electrochem. Soc. 140, 2427 (1993).Google Scholar
4. Mukaigawa, S., Aoki, T., Shimizu, Y., and Kikkawa, T., Jpn. J. Appl. Phys. 39, 2189 (2000).Google Scholar
5. Loke, A. L. S., Ryu, C., Yue, C. P., Cho, J. S. H., and Wong, S. S., IEEE Elec. Dev. Lett 17, 549(1996).Google Scholar
6. Shibahara, K., Onimatsu, D., Ishikawa, Y., Oda, T., and Kikkawa, T., Appl. Surf. Sci. 203&204, 387 (2003).Google Scholar
7. Shim, C., Choi, J., Jung, D., Lee, N. E., and Yang, C. W., Jpn. J. Appl. Phys. 39, L1317 (2000).Google Scholar
8. Lang, D. V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
9. Okushi, H. and Tokumaru, Y., Jpn. J. Appl. Phys. 19, L335 (1980).Google Scholar
10.The wafers were cleaned in a mixture of NH4OH:H2O2:H2O=3:60:140 for 10 min at 80° followed by diluted HF treatment, deionized water rinsing and spin drying (APM cleaning).Google Scholar