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Etching Silicon Through an Effective Nanomask: An Electrochemical Way to Nanomachining

  • Stefano Borini (a1), Andrea M. Rossi (a1), Luca Boarino (a1) and Giampiero Amato (a1)

Abstract

We present a novel approach to silicon nanomachining, based on the electrochemical etching of the material through a nanopatterned mask.Combining a porous silicon (PS) buffer layer with cross-linked poly(methyl methacrylate) (PMMA) we have obtained masks which show high resistance to the electrochemical etching. PMMA is normally dissolved in a HF/EtOH mixture, but it becomes resistant to such a solution after cross-linking of the polymer. This can be achieved by high-dose electron irradiation in a Scanning Electron Microscope (SEM), obtaining a mask for the subsequent etching. Anyway, due to the strong electric field across the masking layer during the electrochemical process, time duration of such a mask is limited. We demonstrate that the presence of a highly porous silicon thin film lying under the resist leads to an evident improvement of the masking power. A final PS removal leads to the formation of silicon micro- and nanostructures in relief, such as microtips and nanomolds. Thus, we have at hand a simple silicon nanomachining process, where the nanofeatures written by the electron beam in the SEM are transferred to the bulk material through a short anodization step in acid solution. This may be a useful alternative method for fabricating nanodevice elements, such as nanofluidic channels or field emitter arrays.

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*Corresponding author, E-mail: borini@ien.it

References

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1 Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).
2 Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347 (1992).
3 Doan, V.V. and Sailor, M.J., Appl. Phys. Lett. 60, 619 (1992).
4 Borini, S., Amato, G., Rocchia, M., Boarino, L., Rossi, A.M., J. Appl. Phys. 93, 4439 (2003).
5 Krüger, M., Arens-Fischer, R., Thönissen, M., Münder, H., Berger, M.G., Lüth, H., Hilbrich, S., Theiss, W., Thin Solid Films 276, 257 (1996).
6 Steiner, P., Lang, W., Thin Solid Films 255, 52 (1995).
7 Nassiopoulou, A.G., Grigoropoulos, S., Canham, L.T., Halimaoui, A., Berbezier, I., Gogolides, E., Papadimitriou, D.,. Thin Solid Films 255, 329 (1995).
8 Nabity, J.C. and Wybourne, M.N., Rev. Sci. Instrum. 60, 27 (1989).
9 Borini, S., Rossi, A.M., Boarino, L., Amato, G., J. Electrochem. Soc. 150, G311 (2003).
10 Teh, W.H., Liang, C.-T., Graham, M., Smith, C.G., J. Microelectromech. S. 12, 641 (2003).
11 Kim, H.S., Chong, K., Xie, Y.H., Appl. Phys. Lett. 83, 2710 (2003).
12 Beale, M.I.J., Benjamin, J.D., Uren, M.J., Chew, N.G., Cullis, A.G., J. Cryst. Growth 73, 622 (1985).
13 Drost, A., Steiner, P., Moser, H., Lang, W., Sensors and Materials 7, 111 (1995).
14 Borini, S., accepted for publication in J. Electrochem. Soc. (2005).

Etching Silicon Through an Effective Nanomask: An Electrochemical Way to Nanomachining

  • Stefano Borini (a1), Andrea M. Rossi (a1), Luca Boarino (a1) and Giampiero Amato (a1)

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